inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor BUX11P description low collector saturation voltage high switching speed high current current capability applications motor control linear and switching industrial equipment absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-base voltage 250 v v cex collector-emitter voltage v be = -1.5v 250 v v ceo collector-emitter voltage 200 v v ebo emitter-base voltage 7 v i c collector current-continuous 20 a i cm collector current-peak 25 a i b base current-continuous 4 a p c collector power dissipation @t c =25 106 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.17 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BUX11P electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0 200 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c = 6a; i b = 0.6a 0.6 v v ce (sat)-2 collector-emitter saturation voltage i c = 12a ;i b = 1.5a 1.5 v v be (sat) base-emitter saturation voltage i c = 12a ;i b = 1.5a 1.5 v i ceo collector cutoff current v ce = 160v; i b = 0 1.5 ma i cex collector cutoff current v ce = 250v;v be = -1.5v v ce = 250v;v be = -1.5v;t c =125 1.5 6.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma h fe-1 dc current gain i c = 6a; v ce = 2v 20 60 h fe-2 dc current gain i c = 12a; v ce = 4v 10 f t current-gainbandwidth product i c = 1a; v ce = 15v, f test = 10mhz 8 mhz switching times t on turn-on time i c = 12a; i b1 = 1.5a; v cc = 150v 1.0 s t s storage time i c = 12a; i b1 = -i b2 = 1.5a; v cc = 150v 1.8 s t f fall time 0.4 s
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